In‐Hwan Lee

Condensed Matter Physics · 2000–2018

A researcher in the Science corpus: 3 papers; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom In‐Hwan Lee trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. C. Walle

Papers from In‐Hwan Lee's perspective

Ordered by how strongly the researchers In‐Hwan Lee trusts endorse each paper. Same corpus, a different order for every researcher.

  1. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
  2. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs (IEEE Electron Device Letters)
  3. 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
  4. 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)
  5. First-principles calculations for defects and impurities: Applications to III-nitrides
  6. AlGaN/AlN/GaN high-power microwave HEMT (IEEE Electron Device Letters)
  7. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
  8. Semiconductor Device Physics and Design
  9. Electronic and Optoelectronic Properties of Semiconductor Structures
  10. High breakdown GaN HEMT with overlapping gate structure (IEEE Electron Device Letters)

Their papers