Robert W. Keyes
Electrical and Electronic Engineering · 2005
A researcher in the Science corpus: 1 paper; trusts 2 researchers and is trusted by 1 researcher here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 7 citations into it; #15,198 of 16,539 by trust here, #16,053 by citations
Whom Robert W. Keyes trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Robert W. Keyes overall
Papers from Robert W. Keyes's perspective
Ordered by how strongly the researchers Robert W. Keyes trusts endorse each paper. Same corpus, a different order for every researcher.
- Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
- Device scaling limits of Si MOSFETs and their application dependencies (Proceedings of the IEEE)
- Beyond the conventional transistor (IBM Journal of Research and Development)
- Interconnect limits on gigascale integration (GSI) in the 21st century (Proceedings of the IEEE)
- Interconnect Opportunities for Gigascale Integration (IEEE Micro)
- Alternative dielectrics to silicon dioxide for memory and logic devices (Nature)
- Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs (IEEE Electron Device Letters)
- Scaling challenges and device design requirements for high performance sub-50 nm gate length planar CMOS transistors (2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104))
- AND T
- Compact physical models for multiwall carbon-nanotube interconnects (IEEE Electron Device Letters)
Their papers
- Physical limits of silicon transistors and circuits (2005) — 147 citations