Compact physical models for multiwall carbon-nanotube interconnects

By A. Naeemi, James D. Meindl. IEEE Electron Device Letters, 2006

337 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0fe15be8c84e8d945131e670a60c342c3f51a439

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In Biomedical Engineering

In Materials Chemistry

Citations in the corpus

Compact AC Modeling and Performance Analysis of Through-Silicon Vias in 3-D ICs (2010, background): “For MWCNTs, the number of conducting channels for a given shell [32]”
Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects (2009, methodology): “Using (7) and (8) in (3), the total conductance of MWCNT can be calculated [65], [103].”
Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects (2008, methodology): “This result also indicates that only resistivity comparison, as presented in [20], is insufficient for the accurate analysis of circuit performance.”
A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part II: Full Device Model and Circuit Performance Benchmarking (2007, methodology): “Thus, a simple and universal interconnect model, similar to the model by Naeemi and Meindl [32], is necessary to evaluate all-CNT CNFET circuit”
Performance Modeling for Single- and Multiwall Carbon Nanotubes as Signal and Power Interconnects in Gigascale Systems (2008, methodology): “of resistance (TCR) of nanotubes were derived in [ 10 ] and [11].”
Single-Conductor Transmission-Line Model of Multiwall Carbon Nanotubes (2010, methodology): “when the voltage drop ∆v along the SWCNT is lower than about 0.1 V/µ m, l mfp depends only on defects and acoustic phonons and its value is demonstrated to be in the range of a few micrometer [ 22 ].”
Crosstalk Prediction of Single- and Double-Walled Carbon-Nanotube (SWCNT/DWCNT) Bundle Interconnects (2009, background): “Both of them can be calculated by (1), when the diameter of DWCNT is smaller than 5 nm [15].”
High-Frequency Analysis of Carbon Nanotube Interconnects and Implications for On-Chip Inductor Design (2009, background): “However, for the case of large-diameter MWCNTs, N of a CNT shell increases with the diameter and can be approximated by [9], [23]”
Physical Modeling of Temperature Coefficient of Resistance for Single- and Multi-Wall Carbon Nanotube Interconnects (2007, background): “1300 nm · K, whose value is determined by the thermal energy of electrons and the gap between the subbands [ 13 ].”