Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping
By E. Víllora, K. Shimamura, Yukio Yoshikawa, T. Ujiie, K. Aoki. 2008
417 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/7f9652f2fdfd38fcc00d73ff5f59ac0f465ae224
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electronic, Optical and Magnetic Materials
- Masataka Higashiwaki
- Akito Kuramata
- Lei Yuan
- Yuming Zhang
- Renxu Jia
- Hongpeng Zhang
- Xiaoyan Tang
- Jichao Hu
In Materials Chemistry
- Masataka Higashiwaki
- Akito Kuramata
- Lei Yuan
- Yuming Zhang
- Renxu Jia
- Hongpeng Zhang
- Xiaoyan Tang
- Jichao Hu
In Renewable Energy, Sustainability and the Environment
- Masataka Higashiwaki
- Akito Kuramata
- Shigenobu Yamakoshi
- Kohei Sasaki
- Lei Yuan
- Yuming Zhang
- Renxu Jia
- Hongpeng Zhang
Citations in the corpus
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “to the preferential variation of oxygen [5], [61], [66], [134], [142].”
- First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes (2017, background): “to 1019 cm−3 by doping the material with Sn or Si [10], [11].”