AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

By M. Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, Michael S. Shur. 2000

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600-V Normally Off ${\rm SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse (2013, methodology): “, Al2O3, SiO2, and SiNx ) have been employed to convert Schottky gate to MIS gate [3], [4], [10]–[14].”
AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance (2008, background): “This performance shows that both high current density and transconductance can be achieved in a single AlN/GaN HEMT with insulated gates.”
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz (2002, background): “As reported before, the presence of the indium surfactant helps in improving the surface and interface roughness by incorporation of trace amounts of indium [9].”
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, background): “Many different insulation materials have been explored as the surface passivation layer for AlGaN/GaN HEMTs, including SiO2 [93,99], Si3N4 [100], ZrO2 [94,101], HfO2 [95,96], Ga2O3 [43,102], AlN [103–106], Sc2O3 [107], TiO2 [108], ZnO2 [109], NiO [110], Ta2O5 [111], Al2O3 [112–114], AlON [43] and so”
Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs (2008, background): “The high-dielectric constant of Ga2O3 (∼10) and its high quality allows the use of thinner layers than in the case of Si-based gate dielectrics (SiO2 or Si3N4) [7], [8].”