Void induced thermal impedance in power semiconductor modules: some transient temperature effects

By D. Katsis, J. D. van Wyk. Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248), 2001

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IGBT Junction Temperature Measurement via Peak Gate Current (2016, background): “Additionally, the thermal and electrical characteristics of a power module alter over the lifetime of a converter [3], [4].”
Monitoring Solder Fatigue in a Power Module Using Case-Above-Ambient Temperature Rise (2011, background): “Solder fatigue reduces the effective area for heat to be conducted out of the IPM [12].”
In Situ Diagnostics and Prognostics of Solder Fatigue in IGBT Modules for Electric Vehicle Drives (2015, background): “of creep [33], voids [34], cracks or delamination [35].”
Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress (2018, unknown): “In [84], the V TH measurement circuit for junction temperature estimation of MOSFETs is proposed.”
Processing and Characterization of Nanosilver Pastes for Die-Attaching SiC Devices (2007, background): “Millimeter-scale voids that are often found in soldered layers can cause local hot spots under devices, lower heat removal efficiency, and reduced reliability [ 12 ].”