Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$

By Christina Schindler, S. C. P. Thermadam, R. Waser, Michael N. Kozicki. IEEE Transactions on Electron Devices, 2007

348 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/685823408b0e02028138049363761241ae878eaa

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. Giacomo Indiveri
3. R. Bruchhaus
4. Rainer Waser
5. B. Linares‐Barranco
6. T. Serrano‐Gotarredona
7. Shibing Long
8. T. Prodromakis

In Polymers and Plastics

1. R. Bruchhaus
2. Rainer Waser
3. Daniele Ielmini
4. H. Philip Wong

Citations in the corpus

• Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications (2010, background): “On the other hand, the reset process of the Au/ZrO2/Ag device is also possible under negative bias (data not shown here), indicating that Joule heating may be responsible for the rupture of the conductive filaments [13].”
• STDP and STDP variations with memristors for spiking neuromorphic learning systems (2013, background): “Depending on the polarity of the set and reset potentials required to change resistive states (RS), the devices can be classified as unipolar (URS) or bipolar (BRS) (Schindler et al., 2007) and consequently, their circuit symbol must indicate somehow their polarity, as depicted in Figure 3A .”