Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage
By T. Watahiki, Yohei Yuda, A. Furukawa, M. Yamamuka, Y. Takiguchi, S. Miyajima. 2017
181 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/2601c9d4700504521ee8b6c3698c92e9b532737f
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
In Renewable Energy, Sustainability and the Environment
Citations in the corpus
- Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (2018, background): “to the two-terminal BVs in heterojunction p-Cu2O/n-Ga2O3 diode fabricated on similar HVPE-Ga2O3 epitaxial layers and substrates [22].”
- 1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm2 (2020, background): “potential of such device might be limited by the much narrower bandgap of p-Cu2O [19].”
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “Homoepitaxial growth β-Ga2O3 thin film on its native substrates has always reported to achieve by the following ways: HVPE [70]–[74], molecular beam epitaxy (MBE) [75]–[80],”