GaN Technology for Power Electronic Applications: A Review

By T. Flack, Bejoy N. Pushpakaran, Stephen B. Bayne. Journal of Electronic Materials, 2016

383 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/0749d4c54cdffd51f0548ce8a0e50513ee0a2fb6

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. D. Nirmal
2. K. Husna Hamza

In Electrical and Electronic Engineering

1. D. Nirmal
2. K. Husna Hamza

In Electronic, Optical and Magnetic Materials

1. D. Nirmal
2. K. Husna Hamza

Citations in the corpus

• A review of GaN HEMT broadband power amplifiers (2020, positive): “The material properties of GaN with wurtzite crystal structure, [13–16] compared to Si, SiC and GaAs are given in Table1.”