Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance

By Jianjing Wang, H. Chung, R. Li. IEEE transactions on power electronics, 2013

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High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications (2016, background): “V SiC Schottky diode (C3D25170H) which provides free-wheeling path (FWD) for the inductor current.”
Modeling and Analysis of SiC MOSFET Switching Oscillations (2016, result): “study is carried out to investigate the effect of the parasitic elements in [22], similar to the empirical analysis in [17].”
Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors (2014, background): “However, [25] excludes consideration of the gate-loop inductance, which renders it inadequate to the task of describing the self-sustained oscil-”
A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices (2020, background): “The reverse recovery current of a diode determines the overshoot of its turn-on current [10], [11].”
Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs (2016, background): “The effect of Ld on a single MOSFET VDS has been analyzed in [29] and [30].”