Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

By Yi Xuan, Yanqing Wu, H. C. Lin, T. Shen, Peide D. Ye. IEEE Electron Device Letters, 2007

173 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/bd31e367711766f220cdc0eae80d8f801c1adf60

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. Yi Xuan
2. P. D. Ye
3. Yanqing Wu

Citations in the corpus

• High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm (2008, background): “with conventional atomic-layer-deposited (ALD) Al2O3, HfO2, and HfAlO are systematically studied [8], [13], [14], [16].”