Drain voltage scaling in carbon nanotube transistors

By M. Radosavljevic, S. Heinze, J. Tersoff, Phaedon Avouris. 2003

175 citations recorded by the source corpus.

Decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior. However, we demonstrate that this also requires scaling the range of the drain voltage. This scaling is needed to avoid an exponential increase in off-current with drain voltage, due to modulation of the Schottky barriers at both the source and drain contact. We illustrate this with results for bottom-gated ambipolar CNFETs with oxides of 2 and 5 nm, and give an explicit scaling rule for the drain voltage. Above the drain voltage limit, the off-current becomes large and has equal electron and hole contributions. This allows the recently reported light emission from appropriately biased CNFETs.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0cfa610fee5e7b56eb8eab4fcd5439f4a751810d

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Citations in the corpus

Carbon nanotube electronics (2002, background): “It has been demonstrated that most CNTFETs to date operates like non-conventional Schottky barrier transistors [19,20], which results in quite different device and scaling behaviors from the MOSFET-like transistors [21,22].”
Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design (2005, background): “Ambipolar characteristics are obtained due to hole injection for negative gate voltages Vgs and electron injection for positive Vgs with a very distinct drain voltage (Vds) dependence [12], [16], [17].”
A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors (2003, background): “thin gate oxide tend to be ambipolar with nearly symmetrical characteristics is consistent with recent experiments [4].”
High-performance carbon nanotube field-effect transistor with tunable polarities (2005, background): “always also results in a higher with a more pronounced dependence, as explained earlier [24].”
Carbon Nanotubes for High-Performance Electronics - Progress and Prospect (2008, unknown): “2 It is important to note that nanotube devices without doping and a gate that impacts the entire tube channel, including the contact areas, always show both n-type and p-type behavior at the same time, as is discussed in detail [ 33 ].”
Carbon Nanotube Electronics and Optoelectronics (2004, background): “Both the shift of the transport curves with drain voltage and the exponential increase of the off-current have been confirmed experimentally [ 38 ].”