Recovery Effects in the Distributed Cycling of Flash Memories

By Neal R. Mielke, Hanmant Belgal, Albert Fazio, Qingru Meng, N. Righos. 2006 IEEE International Reliability Physics Symposium Proceedings, 2006

136 citations recorded by the source corpus.

Subfields: Computer Networks and Communications, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/461ad971a16ab7cedcdd2e4ba45778585774856d

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In Computer Networks and Communications

1. Xiaodong Zhang

Citations in the corpus

• Bit error rate in NAND Flash memories (2008, background): “This is because detrapping is strongly temperature accelerated [21][22] whereas SILC anneals at high temperature [16][30].”
• LDPC-in-SSD: making advanced error correction codes work effectively in solid state drives (2013, background): “Since the memory cell wear-out caused by P/E cycling can partially recover over the time [31,32], reliability of memory blocks cycled during a short time in the lab cannot faithfully represent the reliability characteristics experienced by reallife SSDs.”