P. Altermatt

Electrical and Electronic Engineering · 2002–2020

A researcher in the Science corpus: 10 papers; trusts 4 researchers and is trusted by 3 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 31 citations into it; #6,944 of 16,539 by trust here, #5,046 by citations
• Atomic and Molecular Physics, and Optics — 17 citations into it; #3,218 of 7,135 by trust here, #3,776 by citations
• Materials Chemistry — 7 citations into it

Whom P. Altermatt trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. M. Kerr
2. A. Cuevas
3. Martin A. Green
4. Christian A. Gueymard

Who trusts P. Altermatt overall

1. A. Richter
2. M. Hermle
3. Stefan W. Glunz
4. K. R. McIntosh

Papers from P. Altermatt's perspective

Ordered by how strongly the researchers P. Altermatt trusts endorse each paper. Same corpus, a different order for every researcher.

1. Surface passivation of crystalline silicon solar cells: Present and future (Solar Energy Materials and Solar Cells)
2. Improved parameterization of Auger recombination in silicon
3. The physics of solar cells
4. General parameterization of Auger recombination in crystalline silicon
5. I and J
6. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
7. Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks
8. Third generation photovoltaics (2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601))
9. A Free and Fast Three-Dimensional/Two-Dimensional Solar Cell Simulator Featuring Conductive Boundary and Quasi-Neutrality Approximations (IEEE Transactions on Electron Devices)
10. 24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer (IEEE Journal of Photovoltaics)

Their papers

• Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon (2003) — 316 citations
• Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 (2007) — 414 citations
• Models for numerical device simulations of crystalline silicon solar cells—a review (2011) — 312 citations
• Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing (2003) — 214 citations
• 24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design (2020) — 214 citations
• Mass production of industrial tunnel oxide passivated contacts (i‐TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W (2019) — 160 citations
• A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si:P (2006) — 171 citations
• A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation (2006) — 139 citations
• Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters (2002) — 181 citations
• Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling (2002) — 154 citations