Improved parameterization of Auger recombination in silicon
By A. Richter, F. Werner, A. Cuevas, Jean M. Schmidt, Stefan W. Glunz. 2012
149 citations recorded by the source corpus.
Accurate modeling of the intrinsic recombination in silicon is important for device simulation as well as for interpreting measured effective carrier lifetime data. In this contribution we study the injection-dependent effective carrier lifetime applying advanced surface passivation techniques based on Al2O3 or SiNx We show that in some cases the measured lifetime data significantly exceeds the previously accepted intrinsic lifetime limit proposed by Kerr and Cuevas [1]. To verify our measurements we independently perform lifetime measurements with different measurement techniques in two different laboratories. Based on effective lifetime measurements we develop an advanced parameterization of the intrinsic lifetime in crystalline silicon at 300 K as a function of the doping density and the injection level, which accounts for Coulomb-enhanced Auger recombination and Coulomb-enhanced radiative recombination. © 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/c0e179c2c9bed61fdb797e55a00f912acea7c378
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In Atomic and Molecular Physics, and Optics
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Citations in the corpus
- Engineering Solutions and Root-Cause Analysis for Light-Induced Degradation in p-Type Multicrystalline Silicon PERC Modules (2016, methodology): “tribution of the intrinsic recombination (radiative and Auger) using Richter’s model [19].”
- Mass production of industrial tunnel oxide passivated contacts (i‐TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W (2019, methodology): “The intrinsic lifetime (ie, Auger and radiative recombination) at the injection level of 1 × 1015 cm−3 as a function of base doping is also plotted in Figure 7 for comparison (dotted line), by using the latest Abbreviation: i‐TOPCon, industrial tunnel oxide passivated contacts. update34 of the param”