Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon

By T. Trupke, Martin A. Green, P. Würfel, P. Altermatt, Anna Wang, J. Zhao, R. Corkish. 2003

316 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/99db5434f73b55801dab6178c508f928190eede8

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Stefan W. Glunz
2. M. Hermle
3. A. Richter
4. A. Cuevas
5. F. Werner
6. R. Brendel
7. Robby Peibst

In Electrical and Electronic Engineering

1. Stefan W. Glunz
2. M. Hermle
3. A. Richter
4. F. Werner
5. A. Cuevas
6. Jean M. Schmidt
7. R. Brendel
8. Robby Peibst

In Materials Chemistry

1. Stefan W. Glunz
2. M. Hermle
3. A. Richter
4. A. Cuevas

Citations in the corpus

• Improved parameterization of Auger recombination in silicon (2012, methodology): “73 10 cm s at 300 K [18] Brel – relative radiative recombination coefficient, according to Ref.”
• Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells (2013, methodology): “measured thoroughly the radiative recombination coefficient B [8], which appeared to be 50% smaller than the value used by”