Y. Tseng

Electrical and Electronic Engineering · with Hou · 2011

A researcher in the Science corpus: 1 paper; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Y. Tseng trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Rainer Waser

Papers from Y. Tseng's perspective

Ordered by how strongly the researchers Y. Tseng trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Complementary resistive switches for passive nanocrossbar memories. (Nature Materials)
  2. Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode
  3. TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application
  4. 2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications (2007 IEEE International Electron Devices Meeting)
  5. Electrode dependence of filament formation in HfO2 resistive-switching memory
  6. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges (Advances in Materials)
  7. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication (Nature)
  8. A polymer/semiconductor write-once read-many-times memory (Nature)
  9. High density 3D memory architecture based on the resistive switching effect
  10. Electrochemical metallization memories—fundamentals, applications, prospects (Nanotechnology)

Their papers