High density 3D memory architecture based on the resistive switching effect

By C. Kügeler, M. Meier, R. Rosezin, S. Gilles, Rainer Waser. 2009

155 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/ab2300948e20c5d9b065c11363ac7af8d486a6c4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. R. Rosezin
2. Rainer Waser
3. Daniele Ielmini
4. Ilia Valov
5. Michael N. Kozicki
6. Shimeng Yu
7. H. Philip Wong

In Materials Chemistry

1. Rainer Waser

In Polymers and Plastics

1. Rainer Waser

Citations in the corpus

• Complementary resistive switches for passive nanocrossbar memories. (2010, background): “The integration density can be further increased to 4 F n by stacking n crossbars on each othe”