Zhores Alferov
IEEE Journal of Selected Topics in Quantum Electronics · 2000–2005
A researcher in the Science corpus: 7 papers; trusts 0 researchers and is trusted by 2 researchers here, as inferred from the citation graph.
Who trusts Zhores Alferov overall
Papers from Zhores Alferov's perspective
Ordered by how strongly the researchers Zhores Alferov trusts endorse each paper. Same corpus, a different order for every researcher.
- Low-threshold oxide-confined 1.3-μm quantum-dot laser (IEEE Photonics Technology Letters)
- High performance thin-film flip-chip InGaN–GaN light-emitting diodes
- Band parameters for III–V compound semiconductors and their alloys
- Cavity-quantum electrodynamics using a single InAs quantum dot in a microdisk structure
- Ultra-High Efficiency White Light Emitting Diodes
- Epitaxially Self-Assembled Quantum Dots
- Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes
- High brightness AlGaInP light-emitting diodes
- High-power phosphor-converted light-emitting diodes based on III-Nitrides
- High-Q photonic nanocavity in a two-dimensional photonic crystal (Nature)
Their papers
- Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology (2001) — 313 citations
- InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm (2000) — 186 citations
- High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers (2005) — 156 citations
- InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m range with high (88%) differential efficiency (2002) — 137 citations
- Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors (2000) — 194 citations
- Quantum-dot heterostructure lasers (2000) — 190 citations
- Quantum dot lasers: breakthrough in optoelectronics (2000) — 211 citations