Epitaxially Self-Assembled Quantum Dots
By P. Petroff, A. Lorke, A. Imamoğlu. 2001
273 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/3ffd4219625cf54e484a5c03a311a0ce05081dd7
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Vacuum Rabi splitting in semiconductors (2006, background): “75 monolayers of InAs are deposited on top of GaAs”
- Electronic structure of quantum dots (2002, background): “Other examples of the creation of quantum dots are the selective and self-assembled growth mechanisms of semiconducting compounds (Petroff et al., 2001).”
- Physics of thin-film ferroelectric oxides (2005, background): “(Petroff et al., 2001) The basic idea is that in a system in which the electron mean free path is long with respect to the lateral dimension(s) of the device, a quantum-mechanical increase in energy (and of the bandgap) in the semiconductor will occur.”
- Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity (2004, background): “The sharp emission lines observed from submicrometre collection spots were shown to arise from transitions between discrete energy levels of the quantum dot (QD) depending upon size and shap”