InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm

By J. Lott, N. Ledentsov, V. Ustinov, N. Maleev, A. Zhukov, A. Kovsh, M. Maximov, B. Volovik, Zhores Alferov, D. Bimberg. 2000

186 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/12ba6566a739d52f2008abb4eb3edb22cf98b770

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Zhores Alferov
2. T. Steiner

In Electrical and Electronic Engineering

1. V. Ustinov
2. Zhores Alferov
3. T. Steiner

Citations in the corpus

• Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology (2001, background): “8As by M. Ludowise at Varian, N. Holonyak at the University of Illinois achieved on those structures a cw roomtemperature laser action (Ludowise et al., 1983).”
• Semiconductor Nanostructures for Optoelectronic Applications (2004, background): “3 μm [80]—the wavelength especially important for single-mode fiber communication—presents one of the most apparent and successful applications of QDs.”
• Quantum-dot heterostructure lasers (2000, methodology): “Recently, such devices using QD’s formed by activated spinodal decomposition have been fabricated [114], [88].”