Low-threshold oxide-confined 1.3-μm quantum-dot laser

By G. Park, O. Shchekin, D. Huffaker, D. Deppe. IEEE Photonics Technology Letters, 2000

288 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4f9b0757eb4ee8163388bfc74f993a4e787fed76

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. M. Skolnick
2. D. Mowbray
3. Zhores Alferov
4. T. Steiner

In Electrical and Electronic Engineering

1. M. Skolnick
2. D. Mowbray
3. Zhores Alferov
4. T. Steiner

Citations in the corpus

• Semiconductor Nanostructures for Optoelectronic Applications (2004, methodology): “Among the demonstrated advantages of QD lasers is the lowest threshold current density—19 A/cm(2) —ever reported for continuous-wave (CW) room temperature operation for semiconductor lasers of any type [25].”
• The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures (2000, background): “Parket al. have also improved their QD lasers by growing InGaAs QDs on an InGaAs buffer layer [7].”
• Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology (2001, methodology): “As an example, the worldrecord threshold current density of 19 A/cm2 was recently achieved (Park et al., 2000).”
• High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents (2005, methodology): “However, the maximum output powers achieved for these devices were very low, with values of 290 [ 3 ] and 350 W [10].”
• Impact of intraband relaxation on the performance of a quantum-dot laser (2003, background): “UE TO THE discrete nature of their density of states, quantum-dot (QD) lasers have certain advantages compared with quantum-well (QW) devices: lower threshold current densities [ 1 ] combined with decreased temperature sensitivity [2], [3], low chirp [4] and emission wavelengths that are suited for ”
• Room-temperature operation of InAs quantum-dash lasers on InP [001] (2001, background): “search has yielded impressive laser diode results on GaAs, including: 1) a very low room-temperature threshold current density [2]–[5]; 2) the observation of an ultra-small linewidth enhancement factor [6], [7]; and 3) the attainment of a 201-nm”