Handbook of Nitride Semiconductors and Devices
By H. Morko. 2008
1,004 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/4fdfad8dc3c9d60d8cdf36502de50391c94ffb9f
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Transparent conducting oxides for electrode applications in light emitting and absorbing devices (2010, neutral): “[153,179].”
- GaN: From three- to two-dimensional single-layer crystal and its multilayer van der Waals solids (2016, background): “As for zb-GaN, it can form in the epitaxial growth of thin films on (011) planes of the cubic substrates [2], hence it has a slightly lower cohesive energy relative to wz-GaN.”
- Native point defects and impurities in hexagonal boron nitride (2018, background): “Point defects can have a profound impact on the electronic and optical properties of semiconductors [13], and their characterization is fundamental to understanding materials properties.”