Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe

By M. Levinshtein, S. Rumyantsev, Michael S. Shur. 2001

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Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (2018, background): “Experimentally, room-temperature electron mobilities in excess of ≈1000 cm2 V−1 s−1 can be achieved in very lightly doped bulk GaN, and hole mobilities of ≈24 cm2 V−1 s−1 can be attained in Mg-doped GaN samples.[29,65,74] The corresponding numbers are not yet clearly known in UWBG AlN, however, prim”
Material platforms for defect qubits and single-photon emitters (2020, background): “On the other hand, the relatively low small energy spacing between the defect levels and about twice smaller Debye temperature of 4H-SiC (about 1000K) [303] than diamond’s make the defect qubits’ key magneto-optical properties sensitive to temperature.”