A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

By M. Pelk, W. Neo, J. Gajadharsing, R. Pengelly, L. D. Vreede. IEEE transactions on microwave theory and techniques, 2008

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The Doherty Power Amplifier: Review of Recent Solutions and Trends (2015, background): “A state of the art WCDMA DPA is shown in [33], where three separated input drives for the main and the two auxiliaries”
A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning (2009, background): “However, in spite of their potential, practical outphasing amplifiers are still lacking behind in efficiency performance compared to state-of-the-art envelope tracking [3] or Doherty amplifiers [8].”
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs (2012, methodology): “…typically 3.5 and 10 GHz, provide accurate results for both narrowband and broadband designs up to 20 GHz with narrowband power levels in excess of 100 W. Packaged model parameters have also been developed to support discrete transistors using the same intrinsic model used for MMIC PA design.”
A 1–3-GHz Digitally Controlled Dual-RF Input Power-Amplifier Design Based on a Doherty-Outphasing Continuum Analysis (2013, methodology): “Even a triple-input Doherty PA has been presented in literature, showing excellent power-added efficiency (PAE) performance [9].”
A Modified Doherty Configuration for Broadband Amplification Using Symmetrical Devices (2012, methodology): “Lastly, mixed-signal digital Doherty amplifier designs were explored in [4] and [14].”