Selected failure mechanisms of modern power modules

By M. Ciappa. Microelectronics and reliability, 2002

1,010 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f28d4ceb1e89f4902bdf6f4dbf687b0d47e95cff

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In Electrical and Electronic Engineering

1. Frede Blaabjerg
2. Huai Wang
3. Marco Liserre
4. U. Choi
5. Ke Ma
6. Remus Teodorescu
7. Kyo-Beum Lee
8. Pedro Rodriguez

Citations in the corpus

• State Detection of Bond Wires in IGBT Modules Using Eddy Current Pulsed Thermography (2014, background): “It has been proven that the ageing of bond wires and solder fatigue are the most significant failure mechanisms in IGBT modules [2], [5], [11]–[14].”
• New Approaches to Reliability Assessment: Using physics-of-failure for prediction and design in power electronics systems (2016, background): “As two of the most vulnerable power electronics components with respect to reliability, the failure mechanisms of IGBT modules and capacitors are surveyed in [12] and [13], respectively.”
• Monitoring Solder Fatigue in a Power Module Using Case-Above-Ambient Temperature Rise (2011, background): “Packaging-related solder fatigue is a main root cause of intelligent power module (IPM) failures [3], [9], [10] and can”
• A Lifetime Estimation Technique for Voltage Source Inverters (2013, background): “Clearly, solder degrades faster when ΔTj is greater, which agrees with previous research works [4], [19].”
• Physics-of-Failure Lifetime Prediction Models for Wire Bond Interconnects in Power Electronic Modules (2013, background): “maximum temperature does not exceed 120 ◦C [17].”
• An overview of the reliability prediction related aspects of high power IGBTs in wind power applications (2011, methodology): “The parameter L represents the typical lateral size of the solder joint, Δα is the CTE mismatch between the two surfaces which surround the solder joint, c is the fatigue exponent, x is the thickness of the solder layer and γ is the ductility factor of the solder [8].”
• Transitioning to Physics-of-Failure as a Reliability Driver in Power Electronics (2014, background): “Especially, much interesting work from the semiconductor side investigates the failure mechanisms of insulated-gate bipolar transistor (IGBT) modules [51] and physical-based lifetime models [52].”
• Power Cycling Reliability of Power Module: A Survey (2016, background): “Bond wires are often reported as the weakest component of power modules, responsible for device failures [15], [16], [37].”
• Remaining Useful Lifetime Estimation for Thermally Stressed Power MOSFETs Based on on-State Resistance Variation (2016, background): “H. Duran is with Texas Instruments, Dallas, TX 75080 USA (e-mail: h-duran@ti.com).”
• Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems (2015, background): “Therefore, the possibility of failure is higher in the solder joint between DCB and the baseplate [11]–[13].”
• Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review (2015, background): “[83] M. Ciappa, F. Carbognani, and W. Fichtner, “Lifetime prediction and design of reliability tests for high-power devices in automotive applications,” IEEE Trans.”
• Power Electronics Reliability: State of the Art and Outlook (2021, background): “Theoretically, multiple failure mechanisms exist for a single power electronic component [10–12], [16].”