Remaining Useful Lifetime Estimation for Thermally Stressed Power MOSFETs Based on on-State Resistance Variation

By Serkan Dusmez, H. Duran, B. Akin. IEEE transactions on industry applications, 2016

151 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/77c0a8ed8b64d9fa9b45d562d16d8300d13e9af1

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. Enes Ugur
2. Fei Yang
3. S. Pu
4. Shuai Zhao
5. B. Akin

Citations in the corpus

• Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling (2019, methodology): “In order to accelerate the aging process, various accelerated PCT schemes are used to mimic the field conditions as much as possible [14], [15].”