Development of a SiC JFET-Based Six-Pack Power Module for a Fully Integrated Inverter

By Fan Xu, T. Han, Dong Jiang, Leon M. Tolbert, Fei Fred Wang, J. Nagashima, S. Kim, S. Kulkarni, F. Barlow. IEEE transactions on power electronics, 2013

139 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c5e78e8a975e31fb6200bf33275152ccdca2b1dc

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Paolo Mattavelli
2. Zheng Chen
3. Dushan Boroyevich
4. H. Mantooth
5. Yun Wei Li
6. Frede Blaabjerg
7. Xiongfei Wang
8. José Raúl Rodríguez Rodríguez

Citations in the corpus

• A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications (2014, methodology): “are becoming more popular, and the uses of Cu/Mo [5], [22], Cu/C [6], and AlSiC [23], [33], have been reported.”
• Datasheet Driven Silicon Carbide Power MOSFET Model (2014, background): “INTRODUCTION UNIPOLAR devices like power MOSFETs are very attractive for switch-mode power applications due to several advantages over their bipolar counterparts such as faster switching speed, simpler drive requirements, and better current sharing due to the positive temperature coefficient of on-s”