Improving SiC JFET Switching Behavior Under Influence of Circuit Parasitics

By I. Josifović, J. Popovic-Gerber, J. Ferreira. IEEE transactions on power electronics, 2012

219 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/263ef53bb51fec3be450387d9ea4989b25168828

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In Electrical and Electronic Engineering

Citations in the corpus

An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations (2014, background): “A precise estimate of the magnitude of the losses in the beads has not been made, but the figures presented in [29] suggest that they are unlikely to be significant in comparison to the switching and”
Evaluation of switching performance of SiC devices in PWM inverter fed induction motor drives (2014, background): “Thus, a parasitic capacitance is formed between the drain base plate of SiC devices and common heat sink plate [13].”
Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration (2014, background): “All of these are beneficial to high-power efficiency, quality, and density [1]–[6].”
Overview of Silicon Carbide Technology: Device, Converter, System, and Application (2016, background): “Thus, a chip to baseplate capacitance is formed [99].”
Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives (2014, background): “It can be seen that Ig oscillates in the mid frequency range (f2 = 3 MHz, f6 = 3.3 MHz), and Idc (excluding the superimposed CM current) mainly oscillates in the high-frequency range (f1 = 9.5 MHz, f4 = 12 MHz), while the DM oscillations contain the same oscillation frequency (f3 = 3 MHz, f5 = 3.3 M”
An Extremely High Efficient Three-Level Active Neutral-Point-Clamped Converter Comprising SiC and Si Hybrid Power Stages (2018, background): “Other testing results in [24] show that the parasitic effects can increase the switching losses by a factor of 1.”
Modeling and Analysis of SiC MOSFET Switching Oscillations (2016, methodology): “For the work presented in [25], the snubber resistor was experimentally adjusted until the best damping effect was achieved.”
A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices (2020, methodology): “The use of RC snubbers was analyzed in [15], [24], [25], and [93].”