Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives

By X. Gong, J. Ferreira. IEEE transactions on power electronics, 2014

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In Situ Diagnostics and Prognostics of Solder Fatigue in IGBT Modules for Electric Vehicle Drives (2015, background): “aircraft [4], wind turbines [5], smart grids [6], and industrial drives [7], primarily due to their superior performance in terms”
Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges (2019, methodology): “In [95], the conducted EMI performance in SiC JFET and Si IGBT based motor drives has been compared.”
Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET (2018, background): “Some works about impact factors on the switching performance have been conducted for LV SiC devices including signal isolator [33], parasitic [34], crosstalk issue [35], electromagnetic interference (EMI) [36], and impact of load [37], but these works have not been extended into HV SiC devices.”