State of the art of high temperature power electronics

By C. Buttay, D. Planson, B. Allard, D. Bergogne, P. Bevilacqua, C. Joubert, M. Lazar, C. Martin, H. Morel, D. Tournier and 1 more. 2009

407 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b8ed31f40354244c4d6cfa0b00890aaf24365b0b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Y. T. Lin
2. Kim S. Siow

Citations in the corpus

• Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective (2023, background): “The ability and suitability of these devices to operate at much higher temperatures due to their low intrinsic carrier concentrations and deep-level dopants is compelling for many automotive, aerospace, military and downhole applications [187, 188].”
• Identifying the Development State of Sintered Silver (Ag) as a Bonding Material in the Microelectronic Packaging Via a Patent Landscape Study (2016, background): “Such elevated condition is common during the operations of WBG semiconductor, namely, gallium nitride (GaN) and silicon carbide (SiC) [10].”