High-Power and High-Efficiency InGaN-Based Light Emitters
By A. Laubsch, M. Sabathil, J. Baur, M. Peter, Berthold Hahn. IEEE Transactions on Electron Devices, 2010
322 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/f8843a5f809fde55054277d4b1408b323a8b1551
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review (2014, background): “The use of state-of-the-art flip-chip designs with one-side electrode access to both n- and p-contact layers (Shchekin et al. 2006; Laubsch et al. 2010) enables considerable reduction of the above shading effect.”