Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

By K. Rodbell, D. Heidel, Henry H. K. Tang, Michael S. Gordon, Phil Oldiges, Conal E. Murray. IEEE Transactions on Nuclear Science, 2007

192 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b511b1becd0d78c439877db7bb5d94f555584ee5

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In Electrical and Electronic Engineering

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Citations in the corpus

• Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions (2009, background): “Evidence of direct ionization from protons has been reported for 65 nm CMOS technologies [1], [2].”
• Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM (2008, methodology): “An analysis [1] of the upset data in Fig.”