Theory of the Junctionless Nanowire FET
By Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani. IEEE Transactions on Electron Devices, 2011
237 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/42af318ad5c2184bc2b37bf4b8fe5cfab815b762
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Biomedical Engineering
In Electrical and Electronic Engineering
Citations in the corpus
- Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs (2012, background): “Some theoretical studies have highlighted the features of JL-SiNW transistors and their projected performance for future applications [3], [4].”
- A Quasi-Two-Dimensional Threshold Voltage Model for Short-Channel Junctionless Double-Gate MOSFETs (2012, background): “Several references in the literature have reported the analytical model for JL double-gate MOSFETs [7]–[10] and JL surroundinggate MOSFETs [11]–[13], all of which only focus on analyzing the long-channel characteristics and cannot predict the shortchannel behavior when the devices are pushed into a ”