Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments

By J. Hornberger, A. Lostetter, K. Olejniczak, T. McNutt, S. M. Lal, A. Mantooth. IEEE Aerospace Conference. Proceedings, 2004

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Die Attach Materials for High Temperature Applications: A Review (2011, background): “This technology has the potential to improve upon many of the current limitations associated with Si electronics, in particular, the limitations of silicon device switching speeds, junction temperatures, and power density [1].”
Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges (2019, background): “landers for space exploration are typical examples of drives in high-temperature environment [18]-[20].”
High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment (2007, background): “This last feature of SiC devices opens the door to a wide range of application in the emerging area of high-temperature electronics [6].”
Survey of High-Temperature Reliability of Power Electronics Packaging Components (2015, background): “temperatures, possess a higher breakdown voltage, present lower switching losses, and withstand higher current densities [1], [2].”