Improvement of resistive memory switching in NiO using IrO2

By Dong-chan Kim, Myoung-Jae Lee, Seung‐Eon Ahn, S. Seo, Ju Chul Park, I. Yoo, I. Baek, Hae-Sung Kim, E. Yim, Je‐hun Lee and 5 more. 2006

185 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/9658adc5e69d92c61516ff6382a2244c9fe2db83

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. R. Bruchhaus
3. Rainer Waser
4. Tseung-Yuen Tseng
5. Chenming Calvin Hu
6. H. Philip Wong
7. Ilia Valov
8. Shimeng Yu

In Polymers and Plastics

1. R. Bruchhaus
2. Rainer Waser
3. Daniele Ielmini
4. H. Philip Wong

Citations in the corpus

• Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, methodology): “Improved switching properties in terms of narrower V set , V reset , R off , and R on distributions were observed after inserting an about 5 nm thick conducting IrO 2 layer between the NiO and the Pt electrode forming a Pt/IrO 2 /NiO/IrO 2 /Pt memory element 36 .”
• Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices (2007, background): “Digital Object Identifier 10.1109/LED.2007.894652 after a long-time operation, the dispersions of these parameters lead to severe control and readout hazards.”