Band parameters for nitrogen-containing semiconductors

By I. Vurgaftman, J. Meyer. 2003

2,624 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/7baa20fe064e2f50746ab8b7197b9a5068b5ac9c

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In Atomic and Molecular Physics, and Optics

1. Nelson Tansu
2. Hongping Zhao
3. R. Arif
4. Guangyu Liu
5. Jing Zhang
6. Steven P. DenBaars
7. Umesh K. Mishra
8. Shuji Nakamura

In Condensed Matter Physics

1. Nelson Tansu
2. Hongping Zhao
3. R. Arif
4. Guangyu Liu
5. Jing Zhang
6. Steven P. DenBaars
7. Y. Ee
8. Umesh K. Mishra

In Electrical and Electronic Engineering

1. Umesh K. Mishra
2. Hongping Zhao
3. J. L. Lyons
4. Steven P. DenBaars
5. R. Arif
6. Shuji Nakamura
7. Nelson Tansu
8. Jing Zhang

Citations in the corpus

• Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm (2009, methodology): “The material parameters of binary InN, GaN for the band structure calculation are obtained from [18] and [19], which are summarized in the table in [14].”
• Computationally predicted energies and properties of defects in GaN (2017, background): “51 eV is obtained, in agrement with the experimental value.(57) The GaN lattice parameters are much less sensitive to the choice of functional.”