Recent advances in diamond power semiconductor devices
By Hitoshi Umezawa. 2018
214 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/ee1781667eff931ddb4a79fcc8cf64b9ba6f4e5f
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Giorgia Longobardi
- Lei Yuan
- Yuming Zhang
- Hongpeng Zhang
- Xiaoyan Tang
- Florin Udrea
- Julien Pernot
- Nicolas Rouger
In Materials Chemistry
- Giorgia Longobardi
- Lei Yuan
- Yuming Zhang
- Hongpeng Zhang
- Xiaoyan Tang
- Florin Udrea
- Julien Pernot
- Nicolas Rouger
Citations in the corpus
- Surface transfer doping of diamond: A review (2021, unknown): “Comparison of figures-of-merit for diamond compared with other semiconductors based on Baliga’s and Huang’s analysis [7,18,20].”
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “device performance, includingVbr of 2 kV [232], [233], Ids,sat of 1.”
- Diamond power devices: state of the art, modelling, figures of merit and future perspective (2019, background): “Max current ≈30 mA at T > 550 K [6] 40 A cm−2 at T = 300 K with VDS = −1 V and Ig = 0.”