D. Moran
Electrical and Electronic Engineering · with Abrokwah · 2007–2021
A researcher in the Science corpus: 2 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 14 citations into it
Whom D. Moran trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- A. Huang (in Electrical and Electronic Engineering)
Papers from D. Moran's perspective
Ordered by how strongly the researchers D. Moran trusts endorse each paper. Same corpus, a different order for every researcher.
- Ab initio supercell calculations on nitrogen-vacancy center in diamond: Electronic structure and hyperfine tensors
- Origin of surface conductivity in diamond (Physical Review Letters)
- Electric-field sensing using single diamond spins
- Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage (IEEE Electron Device Letters)
- Direct observation of negative electron affinity in hydrogen-terminated diamond surfaces
- Focus on the Rashba effect
- Characterization and application of single fluorescent nanodiamonds as cellular biomarkers (Proceedings of the National Academy of Sciences of the United States of America)
- Nitrogen-vacancy centers in diamond: nanoscale sensors for physics and biology. (Annual review of physical chemistry (Print))
- Structure
- High hole mobility in boron doped diamond for power device applications
Their papers
- Surface transfer doping of diamond: A review (2021) — 151 citations
- Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$ (2007) — 144 citations