Carbon nanotubes for interconnect applications

By Franz Kreupl, Andrew Graham, M. Liebau, Georg S. Duesberg, R. Seidel, E. Unger. IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2002

683 citations recorded by the source corpus.

We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node a current density of 5/spl middot/10/sup 8/ A/cm/sup 2/ and a resistance of 7.8 k/spl Omega/ could be achieved for a single multi-walled CNT vertical interconnect.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4b2337b5bab014f2ba422f61b16bf9761441554f

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In Atomic and Molecular Physics, and Optics

1. Wen-Yan Yin
2. J. Mao
3. Kaustav Banerjee
4. Hong Li
5. Yehia Massoud
6. Arthur Nieuwoudt
7. Eric Pop
8. Chuan Xu

In Electrical and Electronic Engineering

1. Hong Li
2. Kaustav Banerjee
3. Chuan Xu
4. Navin Srivastava
5. Eric Pop
6. Roberto Suaya
7. Wen-Yan Yin
8. Franz Kreupl

In Materials Chemistry

1. Hong Li
2. Kaustav Banerjee
3. Chuan Xu
4. Eric Pop
5. Kenneth E. Goodson
6. Navin Srivastava
7. Wen-Yan Yin
8. J. Mao

Citations in the corpus

• On the Applicability of Single-Walled Carbon Nanotubes as VLSI Interconnects (2009, methodology): “Metallic CNTs have aroused a lot of interest as VLSI interconnects of the future [8]–[11], [19]–[22], because of their extremely desirable electrical and thermal properties.”
• Modeling, Analysis, and Design of Graphene Nano-Ribbon Interconnects (2009, background): “Lattice structures of (a) graphene [5], (b) carbon nanomaterials based on graphene [left: single-walled; right: multiwalled CNTs (rolled graphene sheets)] [6], (c) monolayer GNR (patterned graphene sheet), and (d) multilayer GNR (patterned graphite).”
• Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects (2008, background): “[9]–[12], nearly all modeling efforts are focused on the analysis of isolated SWCNTs [13] or SWCNT bundles [14]–[17].”
• Compact AC Modeling and Performance Analysis of Through-Silicon Vias in 3-D ICs (2010, background): “Their low electrical resistivity [19], [20], reduced skin effect [21], [22], high thermal conductivity [23], and current carry capacity [19] merit additional attention.”
• Properties and behavior of carbon nanomaterials when interfacing neuronal cells: How far have we come? (2019, neutral): “1 ), and the current density of metallic CNTs is orders of magnitude higher than those of metals such as copper [26,27].”
• Carbon nanotubes: a review on properties, synthesis methods and applications in micro and nanotechnology (2021, background): “More over the MWCNTs have superior dispersion properties as compared to SWCNTs.”
• Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects (2009, methodology): “More conventionally, the etch-first approach has been pursued by several groups [26], [28], [72], where the dielectric is deposited and via holes are etched before growing nanotubes [shown in Fig.”
• Evaluating the impact of resistance in carbon nanotube bundles for VLSI interconnect using diameter-dependent modeling techniques (2006, background): “connect due to their large conductivity and current carrying capabilities [6], [ 7 ].”
• High-Frequency Analysis of Carbon Nanotube Interconnects and Implications for On-Chip Inductor Design (2009, background): “ARBON nanotubes (CNTs) have been proposed for VLSI interconnect applications [ 1 ] due to their outstanding electrical and thermal properties [2]–[5].”
• Electrical and thermal transport in metallic single-wall carbon nanotubes on insulating substrates (2006, background): “Within integrated circuits, semiconducting SWNTs can be used for transistor device applications [4], while metallic SWNTs have been proposed as advanced interconnects [5].”