Evaluating the impact of resistance in carbon nanotube bundles for VLSI interconnect using diameter-dependent modeling techniques

By Arthur Nieuwoudt, Yehia Massoud. IEEE Transactions on Electron Devices, 2006

182 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d174e3c77393bf6e7347b4f34314dc3e3e7026cf

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Kaustav Banerjee
2. Hong Li
3. Wen-Yan Yin
4. J. Mao
5. James D. Meindl
6. Navin Srivastava
7. Q. Liu
8. Shao-Ning Pu

In Materials Chemistry

1. Hong Li
2. Kaustav Banerjee
3. Navin Srivastava
4. Wen-Yan Yin
5. James D. Meindl
6. A. Naeemi
7. J. Mao
8. Franz Kreupl

Citations in the corpus

• On the Applicability of Single-Walled Carbon Nanotubes as VLSI Interconnects (2009, background): “While the diameter dependence of SWCNT resistance has been discussed in [46], this paper discusses the impact of”
• Performance Modeling for Single- and Multiwall Carbon Nanotubes as Signal and Power Interconnects in Gigascale Systems (2008, result): “The performances of copper and CNT interconnects were later compared in [ 4 ]–[9].”
• Crosstalk Prediction of Single- and Double-Walled Carbon-Nanotube (SWCNT/DWCNT) Bundle Interconnects (2009, methodology): “The impacts of resistance, inductance, process variation, and electron–phonon scattering in SWCNT bundles used for future VLSI interconnects were examined in [10]–[14].”