Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
By H. Masui, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra. IEEE Transactions on Electron Devices, 2010
226 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/03ff0a6134e81eb6cc588cc5659a11331abd5e56
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
In Mechanics of Materials
Citations in the corpus
- Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution” (2012, background): “InGaN/GaN wafers grown nonpolar/ semipolar orientation have eliminated the polarization-induced fields [32]–[34], therefore enabling a complete overlap between electron and hole wave functions and an increase in the optical matrix element [35], [36].”