Review of Silicon Carbide Power Devices and Their Applications

By X. She, Alex Q. Huang, Óscar Lucía, Burak Ozpineci. IEEE transactions on industrial electronics (1982. Print), 2017

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A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices (2020, background): “As a result, the output capacitance Cds of Si MOSFETs is also bigger than that of SiC MOSFETs.”
A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues (2020, background): “manufacturing processes need to be improved to make the cost of SiC devices more justifiable [5], [11].”
Inductive Wireless Power Transfer Charging for Electric Vehicles–A Review (2021, background): “switching losses, thermal stress and operates at high power levels [212].”
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective (2023, background): “SiC devices are now commercially available in the voltage class of 650–3300 V [7].”
Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability (2019, background): “reduction in system cost has the potential to compensate the higher cost of the SiC switch [6].”