High performance fully-depleted tri-gate CMOS transistors

By B. Doyle, Supriyo Datta, M. Doczy, S. Hareland, B. Jin, J. Kavalieros, T. Linton, A. Murthy, R. Rios, R. Chau. IEEE Electron Device Letters, 2003

461 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/16afab95d7e002050da896ce83c25ba44793c4e5

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In Electrical and Electronic Engineering

Citations in the corpus

In search of "Forever," continued transistor scaling one new material at a time (2005, background): “the majority of future transistor work has focused on making a better intrinsic switch [1]–[3], [19], [67], [68].”
Nanowire transistors without junctions. (2010, background): “The device has a multigate (trigate, to be more specific) configuration, which means that the gate electrode is wrapped along three edges of the device (left, top and right sides of the nanoribbon”
High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices (2006, background): “Among the many innovative approaches, double-gated FinFET [3], [4], tri-gated [5], Π-gated [6], Ω-gated [7], nanowire body [8]–[11], and gateall-around (GAA) [12]–[14] MOSFETs have attracted much”
Tri-Gate Normally-Off GaN Power MISFET (2012, background): “In deeply scaled Si devices, a tri-gate structure has been recently used to reduce the short-channel effects and leakage current [9].”
Hot-Carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature (2009, unknown): “The use of high performances devices with low threshold voltage (VT ) required to move to metal gates, high-K dielectrics deposited on Silicon On Insulator (SOI) structures [6] and Multi-Gate Field Effect Transistors (MUGFETs) [7] in order to improve transistor switching speed and to reduce power co”
Polymer self assembly in semiconductor microelectronics (2006, background): “designs are the finFET [140], the tri-gate FET [141], and”
Analysis of the parasitic S/D resistance in multiple-gate FETs (2005, background): “transistors (MuGFETs) are FinFETs [5], tri-gate FETs [6], Omega-FETs [7], Pi-gate FETs [8], and gate-all-around FETs”