The role of contact resistance in graphene field-effect devices

By Filippo Giubileo, A. Di Bartolomeo. 2017

240 citations recorded by the source corpus.

The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extraction of majority charge carriers to prevent transistor parameter fluctuations caused by variations of the contact resistance. The International Technology Roadmap for Semiconductors, toward integration and down-scaling of graphene electronic devices, identifies as a challenge the development of a CMOS compatible process that enables reproducible formation of low contact resistance. However, the contact resistance is still not well understood despite it is a crucial barrier towards further improvements. In this paper, we review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors. We will summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1583e933adb1dd348c4a3782a33d078f6f55c13d

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In Atomic and Molecular Physics, and Optics

1. Filippo Giubileo
2. A. Di Bartolomeo

In Biomedical Engineering

1. Filippo Giubileo
2. Giuseppe Luongo
3. L. Iemmo
4. Tobias Foller
5. L. Genovese
6. M. Schleberger
7. A. Di Bartolomeo

In Materials Chemistry

1. Filippo Giubileo
2. Giuseppe Luongo
3. L. Iemmo
4. Tobias Foller
5. L. Genovese
6. M. Schleberger
7. A. Di Bartolomeo

Citations in the corpus

• Hysteresis in the transfer characteristics of MoS2 transistors (2017, methodology): “The four leads enable multiple source/drain choices and four-probe measurements to eliminate any effect of the contact resistance [47].”