Current saturation in zero-bandgap, top-gated graphene field-effect transistors.

By I. Meric, Melinda Y. Han, A. Young, B. Ozyilmaz, Philip Kim, Kenneth L. Shepard. Nature Nanotechnology, 2008

1,556 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8cbb9375e437aa79ecee8b6d64dc2f2ccaa151d4

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Performance of monolayer graphene nanomechanical resonators with electrical readout. (2009, background): “1 ), graphene has attracted attention because of its unusual two-dimensional structure and potential for application”
Graphene Transistors: Status, Prospects, and Problems (2013, background): “This phenomenon is called ambipolar conduction and has first been explained in [42].”
Optoelectronic devices based on two-dimensional transition metal dichalcogenides (2016, background): “The most appealing features of graphene for nanophotonic applications originate from its zero-bandgap nature [7], with linear dispersion near the Dirac point [8].”
Regenerative oscillation and four-wave mixing in graphene optoelectronics (2012, background): “ne, in a purely two-dimensional Dirac fermionic structure, have led to intense research spanning from condensed matter physics [1, 2, 3, 4, 5] to nanoscale device applications covering the electrical [6, 7], thermal [8, 9], mechanical [10] and optical [11, 12] domains. Here we report three consecuti”
Experimental Review of Graphene (2011, background): “Since 2008, there has been increased research interest in the GFET analog transistor [163].”
Synthesis and applications of graphene quantum dots: a review (2018, background): “As a result, graphene possesses a zero band gap which is the feature of half-metallic materials, limiting its application in the fields of optoelectronic devices and semiconductors [21].”
Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm (2010, neutral): “region in a zero-bandgap graphene film [13].”