All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3

By Y. Kokubun, Shohei Kubo, S. Nakagomi. 2016

154 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/f4c4c96df4a2946855c0cc9ec1fa6f708657b668

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Jianwu Sun
7. Renxu Jia
8. Yimen Zhang

In Materials Chemistry

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Jianwu Sun
7. Renxu Jia
8. Yimen Zhang

In Renewable Energy, Sustainability and the Environment

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Jianwu Sun
7. Renxu Jia
8. Yimen Zhang

Citations in the corpus

• 1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm2 (2020, methodology): “occurred at the NiO/β-Ga2O3 hetero-interface [21] and the built-in potential should be around 1.”
• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “[211] Y. Kokubun, S. Kubo, and S. Nakagomi, “All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3,” Appl.”