An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput

By A. Kawahara, R. Azuma, Y. Ikeda, K. Kawai, Y. Katoh, Y. Hayakawa, K. Tsuji, S. Yoneda, A. Himeno, K. Shimakawa and 3 more. IEEE Journal of Solid-State Circuits, 2012

303 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b0f79f360132f098b2b9cff13692df08adafe255

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In Electrical and Electronic Engineering

Citations in the corpus

PRIME: A Novel Processing-in-Memory Architecture for Neural Network Computation in ReRAM-Based Main Memory (2016, unknown): “There are two common approaches to improve the density and reduce the cost of ReRAM: multi-layer crossbar architecture [25]–[27] and multi-level cell (MLC) [28]–[30].”
Overcoming the challenges of crossbar resistive memory architectures (2015, methodology): “icated selector or bi-polar diode in each cell to improve κ , as shown in Figure 2c [18, 21, 24].”
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, unknown): “2012 180 8 M Panasonic TaN/TaO2/Ta2O5/Ir [122] 2013 110 512 k Panasonic TaN/TaO2/Ta2O5/Ir [30] 2013 24 32 G Sandisk/Toshiba Metal oxide [28] 2014 27 16 G Micron/Sony Cu-based/oxide [27]”
Neuro-Inspired Computing With Emerging Nonvolatile Memorys (2018, background): “Panasonic has commercial products of microcontrollers with megabyte-capacity embedded TaOx RRAM [48].”
Emerging Memory Technologies: Recent Trends and Prospects (2016, background): “Panasonic reported an 8-Mb cross-point TaOx-based RRAM prototype chip [39].”