Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs

By Antonio Gnudi, Susanna Reggiani, Elena Gnani, Giorgio Baccarani. IEEE Electron Device Letters, 2012

156 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/2cf747f7b62f064fad82d90d6d378311f74ef298

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In Electrical and Electronic Engineering

1. Te-Kuang Chiang

Citations in the corpus

• A Quasi-Two-Dimensional Threshold Voltage Model for Short-Channel Junctionless Double-Gate MOSFETs (2012, background): “Several references in the literature have reported the analytical model for JL double-gate MOSFETs [7]–[10] and JL surroundinggate MOSFETs [11]–[13], all of which only focus on analyzing the long-channel characteristics and cannot predict the shortchannel behavior when the devices are pushed into a ”