Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

By Shinji Yuasa, T. Nagahama, Akio Fukushima, Yoshishige Suzuki, K. Ando. Nature Materials, 2004

2,983 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/e47a34ea957f33f34fe393876b892ac7ee429d45

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In Atomic and Molecular Physics, and Optics

In Electronic, Optical and Magnetic Materials

Citations in the corpus

Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions (2008, neutral): “To address this, we present quantitative experimental measurements of the spin torque in MgO-based magnetic tunnel junction”
Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities (2011, background): “The large tunnel magnetoresistance [19, 20] allows us to detect clearly DW motions when they propagate in the free layer of the stack [21].”
Towards Oxide Electronics: a Roadmap (2019, methodology): “spintronic devices for classical information pro-cessing such as magnetic tunnel junctions and the major break-through in this field in 2005 was based mainly on the optimization of the ferromagnetic layer (Fe)/ oxide(MgO) interface [419,420].”
Tunnel Magnetoresistance Over 100% in MgO-Based Magnetic Tunnel Junction Films With Perpendicular Magnetic L1$_{0}$-FePt Electrodes (2008, background): “The experimental results of the giant TMR ratio above 200% were reported for MgO-based MTJs such as the fully epitaxial Fe(001)/MgO(001)/Fe(001) MTJs [6] and the textured”
Basic principles of STT-MRAM cell operation in memory arrays (2013, methodology): “A giant TMR arising from a symmetry-based spin filter effect in MgO barrier was predicted by Butler et al in 2001 [5] and observed independently by Parkin et al and Yuasa et al in 2004 [6, 7].”
Interface-Induced Phenomena in Magnetism (2016, positive): “, 2001; Mathon and Umerski, 2001] led to the realization [Parkin et al., 2004; Yuasa et al., 2004] of extremely large TMR values in textured or epitaxial systems such as Fe/MgO/Fe.”
Spin-polarised currents and magnetic domain walls (2005, methodology): “used pure Fe electrodes grown by MBE techniques 41 , whilst Parkin et al.”
Ultra-Fast Perpendicular Spin–Orbit Torque MRAM (2015, background): “to reach the high tunneling magnetoresistance (TMR) ratio needed for memory applications [16], [17] (>100%), as it promotes a (111) fcc texture while a (100) bcc structure at the CoFe/MgO interface is needed to achieve high TMR [18]–[20].”